HSCC2734 Datasheet and Replacement
Type Designator: HSCC2734
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 10.6 nC
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: DFN2X3
HSCC2734 substitution
HSCC2734 Datasheet (PDF)
hscc2734.pdf

HSCC2734 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC2734 is the low RDSON trenched N-V 20 V DSCH MOSFETs with robust ESD protection. This R 16 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 8 A DThe HSCC2734 meet the RoHS and Green Product requirement with full function reliability approved. Lo
Datasheet: HSBG2103 , HSCA2030 , HSCB1216 , HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , 10N65 , HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 .
History: IRLU9343-701PBF
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History: IRLU9343-701PBF



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