HSCC2734 Datasheet and Replacement
Type Designator: HSCC2734
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 83 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: DFN2X3
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HSCC2734 Datasheet (PDF)
hscc2734.pdf

HSCC2734 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC2734 is the low RDSON trenched N-V 20 V DSCH MOSFETs with robust ESD protection. This R 16 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 8 A DThe HSCC2734 meet the RoHS and Green Product requirement with full function reliability approved. Lo
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IPB65R190C7
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History: IPB65R190C7



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