All MOSFET. HSCE2530 Datasheet

 

HSCE2530 Datasheet and Replacement


   Type Designator: HSCE2530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.7 nS
   Cossⓘ - Output Capacitance: 501 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: DFN3.3X3.3
 

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HSCE2530 Datasheet (PDF)

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HSCE2530

HSCE2530 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCE2530 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 2 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

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HSCE2530

HSCE2631 P-Ch 20V Fast Switching MOSFETs Description Product Summary V -20 V DSThe HSCE2631 is the high cell density trenched P-ch MOSFETs, which provide excellent R 3.6 m DS(ON),typRDSON and gate charge for most of the synchronous buck converter applications. I -50 A DThe HSCE2631 meet the RoHS and Green Product requirement with full function reliability approve

Datasheet: HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 , STP80NF70 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 .

History: NCE30P30G | RDR005N25 | R8010ANX | SFP040N40C2 | NCEP12N10AQ | SWD9N50D | SWF16N70D

Keywords - HSCE2530 MOSFET datasheet

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