All MOSFET. HSCE2631 Datasheet

 

HSCE2631 Datasheet and Replacement


   Type Designator: HSCE2631
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3.3X3.3
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HSCE2631 Datasheet (PDF)

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HSCE2631

HSCE2631 P-Ch 20V Fast Switching MOSFETs Description Product Summary V -20 V DSThe HSCE2631 is the high cell density trenched P-ch MOSFETs, which provide excellent R 3.6 m DS(ON),typRDSON and gate charge for most of the synchronous buck converter applications. I -50 A DThe HSCE2631 meet the RoHS and Green Product requirement with full function reliability approve

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 hsce2530.pdf pdf_icon

HSCE2631

HSCE2530 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCE2530 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 2 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQP9N15 | 1N70Z | AP30H80Q | R6006JND3 | CSD13302W | PDD0906 | BSZ063N04LS6

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