HSCE2631 Specs and Replacement

Type Designator: HSCE2631

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 509 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN3.3X3.3

HSCE2631 substitution

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HSCE2631 datasheet

 ..1. Size:778K  huashuo
 hsce2631.pdf pdf_icon

HSCE2631

HSCE2631 P-Ch 20V Fast Switching MOSFETs Description Product Summary V -20 V DS The HSCE2631 is the high cell density trenched P-ch MOSFETs, which provide excellent R 3.6 m DS(ON),typ RDSON and gate charge for most of the synchronous buck converter applications. I -50 A D The HSCE2631 meet the RoHS and Green Product requirement with full function reliability approve... See More ⇒

 9.1. Size:788K  huashuo
 hsce2530.pdf pdf_icon

HSCE2631

HSCE2530 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCE2530 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 2 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒

Detailed specifications: HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211, HSCC8233, HSCE2530, 5N60, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04

Keywords - HSCE2631 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.