All MOSFET. HSCE2631 Datasheet

 

HSCE2631 Datasheet and Replacement


   Type Designator: HSCE2631
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 76 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3.3X3.3
 

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HSCE2631 Datasheet (PDF)

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HSCE2631

HSCE2631 P-Ch 20V Fast Switching MOSFETs Description Product Summary V -20 V DSThe HSCE2631 is the high cell density trenched P-ch MOSFETs, which provide excellent R 3.6 m DS(ON),typRDSON and gate charge for most of the synchronous buck converter applications. I -50 A DThe HSCE2631 meet the RoHS and Green Product requirement with full function reliability approve

 9.1. Size:788K  huashuo
 hsce2530.pdf pdf_icon

HSCE2631

HSCE2530 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCE2530 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 2 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

Datasheet: HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , 13N50 , HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 .

History: IRF7324PBF-1 | NCEP050N85

Keywords - HSCE2631 MOSFET datasheet

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