All MOSFET. HSCE2631 Datasheet

 

HSCE2631 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSCE2631
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3.3X3.3

 HSCE2631 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSCE2631 Datasheet (PDF)

 ..1. Size:778K  huashuo
 hsce2631.pdf

HSCE2631 HSCE2631

HSCE2631 P-Ch 20V Fast Switching MOSFETs Description Product Summary V -20 V DSThe HSCE2631 is the high cell density trenched P-ch MOSFETs, which provide excellent R 3.6 m DS(ON),typRDSON and gate charge for most of the synchronous buck converter applications. I -50 A DThe HSCE2631 meet the RoHS and Green Product requirement with full function reliability approve

 9.1. Size:788K  huashuo
 hsce2530.pdf

HSCE2631 HSCE2631

HSCE2530 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCE2530 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 2 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE2530 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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