All MOSFET. HSCE6032 Datasheet

 

HSCE6032 Datasheet and Replacement


   Type Designator: HSCE6032
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41.2 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN3.3X3.3
 

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HSCE6032 Datasheet (PDF)

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HSCE6032

HSCE6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSCE6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Datasheet: HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , HSCC8233 , HSCE2530 , HSCE2631 , SKD502T , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 .

History: TSP5N60M

Keywords - HSCE6032 MOSFET datasheet

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