HSCE6032 Specs and Replacement

Type Designator: HSCE6032

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41.2 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DFN3.3X3.3

HSCE6032 substitution

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HSCE6032 datasheet

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HSCE6032

HSCE6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSCE6032 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 50 A The HSCE6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒

Detailed specifications: HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211, HSCC8233, HSCE2530, HSCE2631, RFP50N06, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04, HSH15810

Keywords - HSCE6032 MOSFET specs

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