HSD6016 Specs and Replacement

Type Designator: HSD6016

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO251

HSD6016 substitution

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HSD6016 datasheet

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HSD6016

HSD6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSD6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 47 A The HSD6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit... See More ⇒

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HSD6016

HSD6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DS The HSD6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),max RDSON and gate charge for most of the synchronous buck converter applications. I 23 A D The HSD6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒

Detailed specifications: HSCC8211, HSCC8233, HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, 20N50, HSF10N65, HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024

Keywords - HSD6016 MOSFET specs

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