All MOSFET. HSD6016 Datasheet

 

HSD6016 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSD6016
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.7 nC
   trⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO251

 HSD6016 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSD6016 Datasheet (PDF)

 ..1. Size:495K  huashuo
 hsd6016.pdf

HSD6016 HSD6016

HSD6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSD6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 47 A The HSD6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

 9.1. Size:264K  huashuo
 hsd6004.pdf

HSD6016 HSD6016

HSD6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSD6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSD6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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