All MOSFET. HSF10N65 Datasheet

 

HSF10N65 Datasheet and Replacement


   Type Designator: HSF10N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
 

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HSF10N65 Datasheet (PDF)

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HSF10N65

HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guarante

Datasheet: HSCC8233 , HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , CS150N03A8 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A .

History: RF1S640SM | STH185N10F3-6

Keywords - HSF10N65 MOSFET datasheet

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