HSF10N65 Specs and Replacement

Type Designator: HSF10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 103 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

HSF10N65 substitution

- MOSFET ⓘ Cross-Reference Search

 

HSF10N65 datasheet

 ..1. Size:1531K  huashuo
 hsf10n65.pdf pdf_icon

HSF10N65

HSF10N65 Product Summary Description VDS 650 V The HSF10N65 utilizes the advanced technology and low resistance package to RDS(ON),typ 800 m achieve extremely low on-resistance device which makes the system design an efficient ID 10 A and reliable solution for use in a wide variety of applications. TO220F Pin Configuration High Efficiency 100% EAS Guarante... See More ⇒

Detailed specifications: HSCC8233, HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, IRF520, HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A

Keywords - HSF10N65 MOSFET specs

 HSF10N65 cross reference

 HSF10N65 equivalent finder

 HSF10N65 pdf lookup

 HSF10N65 substitution

 HSF10N65 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility