All MOSFET. HSH15810 Datasheet

 

HSH15810 Datasheet and Replacement


   Type Designator: HSH15810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 609 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
 

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HSH15810 Datasheet (PDF)

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HSH15810

HSH15810 N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 120 A technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectification.

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HSH15810

HSH150N04 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSH150N04 is the high cell density trenched VDS 40 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSH150N04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r

Datasheet: HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , 8N60 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 .

History: CJP02N60

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