HSH15810 Specs and Replacement

Type Designator: HSH15810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 609 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

HSH15810 substitution

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HSH15810 datasheet

 ..1. Size:809K  huashuo
 hsh15810.pdf pdf_icon

HSH15810

HSH15810 N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 120 A technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectification.... See More ⇒

 9.1. Size:588K  huashuo
 hsh150n04.pdf pdf_icon

HSH15810

HSH150N04 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSH150N04 is the high cell density trenched VDS 40 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSH150N04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r... See More ⇒

Detailed specifications: HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04, IRFZ24N, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004

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