All MOSFET. HSH15810 Datasheet

 

HSH15810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSH15810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 609 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263

 HSH15810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSH15810 Datasheet (PDF)

 ..1. Size:809K  huashuo
 hsh15810.pdf

HSH15810 HSH15810

HSH15810 N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 120 A technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectification.

 9.1. Size:588K  huashuo
 hsh150n04.pdf

HSH15810 HSH15810

HSH150N04 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSH150N04 is the high cell density trenched VDS 40 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSH150N04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r

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