All MOSFET. HSH190N03 Datasheet

 

HSH190N03 Datasheet and Replacement


   Type Designator: HSH190N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263
 

 HSH190N03 substitution

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HSH190N03 Datasheet (PDF)

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HSH190N03

HSH190N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH190N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 1.9 m buck converter applications. ID 190 A The HSH190N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , IRF830 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 .

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