All MOSFET. HSH190N03 Datasheet

 

HSH190N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSH190N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263

 HSH190N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSH190N03 Datasheet (PDF)

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 hsh190n03.pdf

HSH190N03 HSH190N03

HSH190N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH190N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 1.9 m buck converter applications. ID 190 A The HSH190N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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