HSH190N03 Specs and Replacement

Type Designator: HSH190N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO263

HSH190N03 substitution

- MOSFET ⓘ Cross-Reference Search

 

HSH190N03 datasheet

 ..1. Size:739K  huashuo
 hsh190n03.pdf pdf_icon

HSH190N03

HSH190N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH190N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 1.9 m buck converter applications. ID 190 A The HSH190N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04, HSH15810, 2N60, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06

Keywords - HSH190N03 MOSFET specs

 HSH190N03 cross reference

 HSH190N03 equivalent finder

 HSH190N03 pdf lookup

 HSH190N03 substitution

 HSH190N03 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility