All MOSFET. HSH200N02 Datasheet

 

HSH200N02 Datasheet and Replacement


   Type Designator: HSH200N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO263
 

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HSH200N02 Datasheet (PDF)

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HSH200N02

HSH200N02 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSH200N02 is the highest performance VDS 200 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 27 m charge for most of the synchronous buck ID 70 A converter applications. The HSH200N02 meet the RoHS and Green Product requirement, 100% EAS

Datasheet: HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , K2611 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 .

History: R6515ENZ | WMN25N80M3

Keywords - HSH200N02 MOSFET datasheet

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