HSH200N02 Specs and Replacement

Type Designator: HSH200N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 343 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: TO263

HSH200N02 substitution

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HSH200N02 datasheet

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HSH200N02

HSH200N02 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSH200N02 is the highest performance VDS 200 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 27 m charge for most of the synchronous buck ID 70 A converter applications. The HSH200N02 meet the RoHS and Green Product requirement, 100% EAS... See More ⇒

Detailed specifications: HSCS2052, HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04, HSH15810, HSH190N03, 8N60, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008

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