HSH250N10 Specs and Replacement

Type Designator: HSH250N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 411 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm

Package: TO263

HSH250N10 substitution

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HSH250N10 datasheet

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HSH250N10

HSH250N10 N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 1.9 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 250 A D technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti... See More ⇒

Detailed specifications: HSD6004, HSD6016, HSF10N65, HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, P60NF06, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.