HSH250N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSH250N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 411 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 250 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 2100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO263
HSH250N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSH250N10 Datasheet (PDF)
..1. Size:677K huashuo
hsh250n10.pdf
hsh250n10.pdf
HSH250N10 N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 1.9 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 250 A D technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP023N10D
