All MOSFET. HSH250N10 Datasheet

 

HSH250N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSH250N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 411 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 250 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 195 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO263

 HSH250N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSH250N10 Datasheet (PDF)

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 hsh250n10.pdf

HSH250N10 HSH250N10

HSH250N10 N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 1.9 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 250 A D technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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