All MOSFET. HSH250N10 Datasheet

 

HSH250N10 Datasheet and Replacement


   Type Designator: HSH250N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 411 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO263
 

 HSH250N10 substitution

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HSH250N10 Datasheet (PDF)

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HSH250N10

HSH250N10 N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 1.9 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 250 A D technology TO263 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti

Datasheet: HSD6004 , HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , AO3401 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 .

History: RF1S640SM | STH185N10F3-6

Keywords - HSH250N10 MOSFET datasheet

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