All MOSFET. HSH3024 Datasheet

 

HSH3024 Datasheet and Replacement


   Type Designator: HSH3024
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 65 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO263
 

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HSH3024 Datasheet (PDF)

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HSH3024

HSH3024 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH3024 is the high cell density trenched N-V 30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous R 1.7 m DS(ON),typbuck converter applications. I 200 A DThe HSH3024 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , IRF520 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 .

Keywords - HSH3024 MOSFET datasheet

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