HSH3024 Datasheet. Specs and Replacement

Type Designator: HSH3024

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 945 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO263

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HSH3024 datasheet

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HSH3024

HSH3024 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH3024 is the high cell density trenched N- V 30 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous R 1.7 m DS(ON),typ buck converter applications. I 200 A D The HSH3024 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSD6016, HSF10N65, HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, 75N75, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004

Keywords - HSH3024 MOSFET specs

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