HSH3024 Datasheet and Replacement
Type Designator: HSH3024
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 945 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: TO263
HSH3024 substitution
HSH3024 Datasheet (PDF)
hsh3024.pdf

HSH3024 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSH3024 is the high cell density trenched N-V 30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous R 1.7 m DS(ON),typbuck converter applications. I 200 A DThe HSH3024 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: HSD6016 , HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , K2611 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 .
History: SIHLI620G
Keywords - HSH3024 MOSFET datasheet
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History: SIHLI620G



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