HSH6024A Specs and Replacement
Type Designator: HSH6024A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73.3 nS
Cossⓘ - Output Capacitance: 571 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO263
HSH6024A substitution
- MOSFET ⓘ Cross-Reference Search
HSH6024A datasheet
hsh6024a.pdf
HSH6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),MAX 4.8 m synchronous buck converter applications. ID 160 A The HSH6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel... See More ⇒
hsh6040.pdf
HSH6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4.3 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSH6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi... See More ⇒
Detailed specifications: HSF10N65, HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, AO3400A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107
Keywords - HSH6024A MOSFET specs
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