All MOSFET. HSH6024A Datasheet

 

HSH6024A Datasheet and Replacement


   Type Designator: HSH6024A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73.3 nS
   Cossⓘ - Output Capacitance: 571 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263
 

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HSH6024A Datasheet (PDF)

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HSH6024A

HSH6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),MAX 4.8 m synchronous buck converter applications. ID 160 A The HSH6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

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HSH6024A

HSH6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4.3 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSH6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

Datasheet: HSF10N65 , HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , RU6888R , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 .

History: STB55NF06L-1 | SRM7N65 | SIHA21N60EF | NCEP055N10G | APT20M18B2VFR | IRLU2905Z | IRF7324

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