HSH6040 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSH6040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 8.8 nS
Cossⓘ - Output Capacitance: 325 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TO263
HSH6040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSH6040 Datasheet (PDF)
hsh6040.pdf
HSH6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4.3 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSH6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
hsh6024a.pdf
HSH6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),MAX 4.8 m synchronous buck converter applications. ID 160 A The HSH6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
