HSH6040 Specs and Replacement

Type Designator: HSH6040

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.8 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO263

HSH6040 substitution

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HSH6040 datasheet

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 hsh6040.pdf pdf_icon

HSH6040

HSH6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4.3 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSH6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi... See More ⇒

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 hsh6024a.pdf pdf_icon

HSH6040

HSH6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),MAX 4.8 m synchronous buck converter applications. ID 160 A The HSH6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel... See More ⇒

Detailed specifications: HSH120N85, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, IRFB31N20D, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20

Keywords - HSH6040 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.