HSH6040 Datasheet and Replacement
Type Designator: HSH6040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.8 nS
Cossⓘ - Output Capacitance: 325 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TO263
HSH6040 substitution
HSH6040 Datasheet (PDF)
hsh6040.pdf

HSH6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4.3 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSH6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi
hsh6024a.pdf

HSH6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),MAX 4.8 m synchronous buck converter applications. ID 160 A The HSH6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
Datasheet: HSH120N85 , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , IRF730 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 .
History: RU4089R | IRF7324PBF-1
Keywords - HSH6040 MOSFET datasheet
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History: RU4089R | IRF7324PBF-1



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