HSH6115 Specs and Replacement

Type Designator: HSH6115

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.6 nS

Cossⓘ - Output Capacitance: 224 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO263

HSH6115 substitution

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HSH6115 datasheet

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HSH6115

HSH6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6115 is the high cell density trenched P- V -60 V DS ch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 25 m buck converter applications. I -45 A D The HSH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel... See More ⇒

Detailed specifications: HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, STP65NF06, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008

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