All MOSFET. HSH6115 Datasheet

 

HSH6115 Datasheet and Replacement


   Type Designator: HSH6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263
 

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HSH6115 Datasheet (PDF)

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HSH6115

HSH6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6115 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 25 m buck converter applications. I -45 A DThe HSH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

Datasheet: HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , IRFZ48N , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 .

History: RU4089R | IRF7324PBF-1

Keywords - HSH6115 MOSFET datasheet

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