All MOSFET. HSH6115 Datasheet

 

HSH6115 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSH6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO263

 HSH6115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSH6115 Datasheet (PDF)

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 hsh6115.pdf

HSH6115 HSH6115

HSH6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH6115 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 25 m buck converter applications. I -45 A DThe HSH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

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