HSH8004 Specs and Replacement

Type Designator: HSH8004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 175 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO263

HSH8004 substitution

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HSH8004 datasheet

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HSH8004

HSH8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DS The HSH8004 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYP gate charge for most of the synchronous buck converter applications. I 175 A D The HSH8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, IRF1405, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107

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