All MOSFET. HSH8004 Datasheet

 

HSH8004 Datasheet and Replacement


   Type Designator: HSH8004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 175 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263
 

 HSH8004 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSH8004 Datasheet (PDF)

 ..1. Size:767K  huashuo
 hsh8004.pdf pdf_icon

HSH8004

HSH8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSH8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSH8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , NCEP15T14 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 .

History: NCEP12T15

Keywords - HSH8004 MOSFET datasheet

 HSH8004 cross reference
 HSH8004 equivalent finder
 HSH8004 lookup
 HSH8004 substitution
 HSH8004 replacement

 

 
Back to Top

 


 
.