HSH8004 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSH8004
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 175 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
HSH8004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSH8004 Datasheet (PDF)
hsh8004.pdf
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HSH8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSH8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSH8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
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