HSH90P06 Specs and Replacement

Type Designator: HSH90P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 501 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO263

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HSH90P06 datasheet

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HSH90P06

HSH90P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH90P06 is the high cell density trenched VDS -60 V P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 7.5 m and gate charge for most of the synchronous buck converter applications. ID -85 A The HSH90P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒

Detailed specifications: HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, 7N60, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026

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