All MOSFET. HSH90P06 Datasheet

 

HSH90P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSH90P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 501 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263

 HSH90P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSH90P06 Datasheet (PDF)

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 hsh90p06.pdf

HSH90P06 HSH90P06

HSH90P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH90P06 is the high cell density trenched VDS -60 V P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 7.5 m and gate charge for most of the synchronous buck converter applications. ID -85 A The HSH90P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MTP3J15N3 | MTN8N50FP | 2SK975 | BLF175 | BRF6N60 | FS16SM-9 | 3N165

 

 
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