All MOSFET. HSH90P06 Datasheet

 

HSH90P06 Datasheet and Replacement


   Type Designator: HSH90P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 501 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

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HSH90P06 Datasheet (PDF)

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HSH90P06

HSH90P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH90P06 is the high cell density trenched VDS -60 V P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 7.5 m and gate charge for most of the synchronous buck converter applications. ID -85 A The HSH90P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Datasheet: HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , MMIS60R580P , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 .

History: IRLU9343-701PBF | SFP043N100C3

Keywords - HSH90P06 MOSFET datasheet

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