HSK0008 Specs and Replacement

Type Designator: HSK0008

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: SOT89

HSK0008 substitution

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HSK0008 datasheet

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HSK0008

HSK0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSK0008 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 2.2 A The HSK0008 meet the RoHS and Green Product requirement with full function reliability approv... See More ⇒

Detailed specifications: HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, IRFZ48N, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026, HSM0048

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.