All MOSFET. HSK0008 Datasheet

 

HSK0008 Datasheet and Replacement


   Type Designator: HSK0008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT89
 

 HSK0008 substitution

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HSK0008 Datasheet (PDF)

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HSK0008

HSK0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSK0008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 2.2 A The HSK0008 meet the RoHS and Green Product requirement with full function reliability approv

Datasheet: HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , RU7088R , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 .

History: PD5P8BA

Keywords - HSK0008 MOSFET datasheet

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