All MOSFET. HSK0008 Datasheet

 

HSK0008 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSK0008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.7 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT89

 HSK0008 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSK0008 Datasheet (PDF)

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 hsk0008.pdf

HSK0008 HSK0008

HSK0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSK0008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 2.2 A The HSK0008 meet the RoHS and Green Product requirement with full function reliability approv

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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