HSK4N10 Specs and Replacement

Type Designator: HSK4N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: SOT89

HSK4N10 substitution

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HSK4N10 datasheet

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HSK4N10

HSK4N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSK4N10 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 150 m gate charge for most of the synchronous buck converter applications. ID 4 A The HSK4N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre... See More ⇒

Detailed specifications: HSH250N10, HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, IRFZ46N, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026, HSM0048, HSM0094

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