All MOSFET. HSK4N10 Datasheet

 

HSK4N10 Datasheet and Replacement


   Type Designator: HSK4N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: SOT89
 

 HSK4N10 substitution

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HSK4N10 Datasheet (PDF)

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HSK4N10

HSK4N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSK4N10 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 150 m gate charge for most of the synchronous buck converter applications. ID 4 A The HSK4N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre

Datasheet: HSH250N10 , HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , STP65NF06 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 .

History: WPM2014 | WMQ119N10LG2 | STB300NH02L | IRLU3705Z | WMO10N70EM | HSBB4052 | NCEP11N10AQU

Keywords - HSK4N10 MOSFET datasheet

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