HSL0004 Datasheet and Replacement
Type Designator: HSL0004
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
Package: SOT223
HSL0004 substitution
HSL0004 Datasheet (PDF)
hsl0004.pdf

HSL0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSL0004 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provides excellent RDS(ON),typ 90 m RDSON and efficiency for most of the small power switching and load switch applications. ID 3 A The HSL0004 meets the RoHS and Green Product requirement with full function reliability appr
Datasheet: HSH3024 , HSH6024A , HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , IRF1405 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 .
History: STK800 | SFP60N100 | IRLU8113PBF | RU40130R | APT12060B2VFR | KN0606L | SSB65R600S2
Keywords - HSL0004 MOSFET datasheet
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History: STK800 | SFP60N100 | IRLU8113PBF | RU40130R | APT12060B2VFR | KN0606L | SSB65R600S2



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