HSL0004 Specs and Replacement

Type Designator: HSL0004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 26.2 nC

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm

Package: SOT223

HSL0004 substitution

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HSL0004 datasheet

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HSL0004

HSL0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSL0004 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provides excellent RDS(ON),typ 90 m RDSON and efficiency for most of the small power switching and load switch applications. ID 3 A The HSL0004 meets the RoHS and Green Product requirement with full function reliability appr... See More ⇒

Detailed specifications: HSH3024, HSH6024A, HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, IRF830, HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026, HSM0048, HSM0094, HSM0204

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