HSL03N20 Specs and Replacement
Type Designator: HSL03N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SOT223
HSL03N20 substitution
- MOSFET ⓘ Cross-Reference Search
HSL03N20 datasheet
hsl03n20.pdf
HSL03N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSL03N20 is the high cell density VDS 200 V trenched N-ch MOSFETs, which provides RDS(ON),typ 0.6 excellent RDSON and efficiency for most of the small power switching and load switch ID 1.5 A applications. The HSL03N20 meets the RoHS and Green Product requirement with full function reliabili... See More ⇒
Detailed specifications: HSH6040, HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, IRF9640, HSL6008, HSL6107, HSM0026, HSM0048, HSM0094, HSM0204, HSM0228, HSM1562
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
