All MOSFET. HSL03N20 Datasheet

 

HSL03N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSL03N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT223

 HSL03N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSL03N20 Datasheet (PDF)

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 hsl03n20.pdf

HSL03N20 HSL03N20

HSL03N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSL03N20 is the high cell density VDS 200 V trenched N-ch MOSFETs, which provides RDS(ON),typ 0.6 excellent RDSON and efficiency for most of the small power switching and load switch ID 1.5 A applications. The HSL03N20 meets the RoHS and Green Product requirement with full function reliabili

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