All MOSFET. HSL03N20 Datasheet

 

HSL03N20 Datasheet and Replacement


   Type Designator: HSL03N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT223
 

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HSL03N20 Datasheet (PDF)

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HSL03N20

HSL03N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSL03N20 is the high cell density VDS 200 V trenched N-ch MOSFETs, which provides RDS(ON),typ 0.6 excellent RDSON and efficiency for most of the small power switching and load switch ID 1.5 A applications. The HSL03N20 meets the RoHS and Green Product requirement with full function reliabili

Datasheet: HSH6040 , HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , IRF9640 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 .

History: NVMD6N04 | NVMFD5483NL | NVMD6N03R2G | NCEP40P65QU

Keywords - HSL03N20 MOSFET datasheet

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