All MOSFET. HSL6008 Datasheet

 

HSL6008 Datasheet and Replacement


   Type Designator: HSL6008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
 

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HSL6008 Datasheet (PDF)

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HSL6008

HSL6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSL6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 80 m and efficiency for most of the small power switching and load switch applications. ID 2.8 A The HSL6008 meet the RoHS and Green Product requirement with full function reliability approve

Datasheet: HSH6115 , HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , 8N60 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 .

History: RF1S640SM | STH185N10F3-6

Keywords - HSL6008 MOSFET datasheet

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