HSL6008 Specs and Replacement
Type Designator: HSL6008
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
HSL6008 substitution
- MOSFET ⓘ Cross-Reference Search
HSL6008 datasheet
hsl6008.pdf
HSL6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSL6008 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 80 m and efficiency for most of the small power switching and load switch applications. ID 2.8 A The HSL6008 meet the RoHS and Green Product requirement with full function reliability approve... See More ⇒
Detailed specifications: HSH6115, HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, IRFB7545, HSL6107, HSM0026, HSM0048, HSM0094, HSM0204, HSM0228, HSM1562, HSM1564
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
