All MOSFET. HSL6008 Datasheet

 

HSL6008 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSL6008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223

 HSL6008 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSL6008 Datasheet (PDF)

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hsl6008.pdf

HSL6008
HSL6008

HSL6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSL6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 80 m and efficiency for most of the small power switching and load switch applications. ID 2.8 A The HSL6008 meet the RoHS and Green Product requirement with full function reliability approve

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HSU6002 | IPW65R280C6 | SSF1006A | ZVP1320FTA | MTP2N18 | SWB068R68E7T | MTP2010J3

 

 
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