HSL6008 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSL6008
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT223
HSL6008 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSL6008 Datasheet (PDF)
hsl6008.pdf
HSL6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSL6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 80 m and efficiency for most of the small power switching and load switch applications. ID 2.8 A The HSL6008 meet the RoHS and Green Product requirement with full function reliability approve
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HSU6002 | IPW65R280C6 | SSF1006A | ZVP1320FTA | MTP2N18 | SWB068R68E7T | MTP2010J3
History: HSU6002 | IPW65R280C6 | SSF1006A | ZVP1320FTA | MTP2N18 | SWB068R68E7T | MTP2010J3
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918