All MOSFET. HSL6008 Datasheet

 

HSL6008 Datasheet and Replacement


   Type Designator: HSL6008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT223
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HSL6008 Datasheet (PDF)

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HSL6008

HSL6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSL6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 80 m and efficiency for most of the small power switching and load switch applications. ID 2.8 A The HSL6008 meet the RoHS and Green Product requirement with full function reliability approve

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1537 | IRLU9343PBF | 2SK3437 | BSZ070N08LS5 | MXP1006AT | VST012N06MS | 15NM70L-TF34-T

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