HSL6107 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSL6107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.6 nC
trⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT223
HSL6107 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSL6107 Datasheet (PDF)
hsl6107.pdf
HSL6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6107 is the high cell density trenched P-ch VDS -60 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 180 m converter applications. ID -2.3 A The HSL6107 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function rel
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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