HSL6107 Specs and Replacement
Type Designator: HSL6107
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT223
HSL6107 substitution
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HSL6107 datasheet
hsl6107.pdf
HSL6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6107 is the high cell density trenched P-ch VDS -60 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 180 m converter applications. ID -2.3 A The HSL6107 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function rel... See More ⇒
Detailed specifications: HSH8004, HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, AON7403, HSM0026, HSM0048, HSM0094, HSM0204, HSM0228, HSM1562, HSM1564, HSM1641
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