HSL6107 Datasheet and Replacement
Type Designator: HSL6107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT223
HSL6107 substitution
HSL6107 Datasheet (PDF)
hsl6107.pdf

HSL6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6107 is the high cell density trenched P-ch VDS -60 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 180 m converter applications. ID -2.3 A The HSL6107 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function rel
Datasheet: HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , EMB04N03H , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 .
History: SSF1116 | SK840320 | RU40C40M | WVM7N12 | SSF6N80F | 2N7640-GA | HMS80N85D
Keywords - HSL6107 MOSFET datasheet
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History: SSF1116 | SK840320 | RU40C40M | WVM7N12 | SSF6N80F | 2N7640-GA | HMS80N85D



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