All MOSFET. HSL6107 Datasheet

 

HSL6107 Datasheet and Replacement


   Type Designator: HSL6107
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT223
 
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HSL6107 Datasheet (PDF)

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HSL6107

HSL6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL6107 is the high cell density trenched P-ch VDS -60 V MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 180 m converter applications. ID -2.3 A The HSL6107 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function rel

Datasheet: HSH8004 , HSH90P06 , HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , EMB04N03H , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 .

History: IPA086N10N3

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