SSU2N60A PDF and Equivalents Search

 

SSU2N60A Specs and Replacement

Type Designator: SSU2N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: IPAK

SSU2N60A substitution

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SSU2N60A datasheet

 ..1. Size:201K  1
ssu2n60a ssr2n60a.pdf pdf_icon

SSU2N60A

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 7.1. Size:645K  fairchild semi
ssr2n60b ssu2n60b.pdf pdf_icon

SSU2N60A

November 2001 SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

 9.1. Size:498K  samsung
ssu2n80a.pdf pdf_icon

SSU2N60A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

Detailed specifications: SSS6N90A , SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , 4435 , SSU3055A , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A .

Keywords - SSU2N60A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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