HSM0228 Specs and Replacement

Type Designator: HSM0228

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOP8

HSM0228 substitution

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HSM0228 datasheet

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 hsm0228.pdf pdf_icon

HSM0228

HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0228 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 68 m gate charge for most of the synchronous buck converter applications. ID 4 A The HSM0228 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

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HSM0228

HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0204 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 112 m and efficiency for most of the small power switching and load switch applications. ID 2.5 A The HSM0204 meets the RoHS and Green Product requirement with full function reliab... See More ⇒

Detailed specifications: HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026, HSM0048, HSM0094, HSM0204, AOD4184A, HSM1562, HSM1564, HSM1641, HSM20N02, HSM2202, HSM24P03, HSM2627, HSM2903

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