HSM0228 Datasheet and Replacement
Type Designator: HSM0228
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
Package: SOP8
HSM0228 substitution
HSM0228 Datasheet (PDF)
hsm0228.pdf

HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0228 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 68 m gate charge for most of the synchronous buck converter applications. ID 4 A The HSM0228 meet the RoHS and Green Product requirement with full function reliability approved.
hsm0204.pdf

HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0204 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 112 m and efficiency for most of the small power switching and load switch applications. ID 2.5 A The HSM0204 meets the RoHS and Green Product requirement with full function reliab
Datasheet: HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , HSM0048 , HSM0094 , HSM0204 , HY1906P , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 , HSM24P03 , HSM2627 , HSM2903 .
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