HSM20N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM20N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 83 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
HSM20N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM20N02 Datasheet (PDF)
hsm20n02.pdf
HSM20N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSM20N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 2.9 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 20 A DThe HSM20N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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