HSM20N02 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HSM20N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8

HSM20N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS