All MOSFET. HSM20N02 Datasheet

 

HSM20N02 Datasheet and Replacement


   Type Designator: HSM20N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8
 

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HSM20N02 Datasheet (PDF)

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HSM20N02

HSM20N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSM20N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 2.9 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 20 A DThe HSM20N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSM0026 , HSM0048 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 , IRFP064N , HSM2202 , HSM24P03 , HSM2627 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 .

History: R6515ENZ | WMN25N80M3

Keywords - HSM20N02 MOSFET datasheet

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