HSM20N02 Specs and Replacement

Type Designator: HSM20N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SOP8

HSM20N02 substitution

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HSM20N02 datasheet

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HSM20N02

HSM20N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DS The HSM20N02 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 2.9 m DS(ON),typ gate charge for most of the synchronous buck converter applications. I 20 A D The HSM20N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSM0026, HSM0048, HSM0094, HSM0204, HSM0228, HSM1562, HSM1564, HSM1641, AO4468, HSM2202, HSM24P03, HSM2627, HSM2903, HSM3002, HSM3006, HSM3056, HSM3107

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