All MOSFET. SSU3055A Datasheet

 

SSU3055A Datasheet and Replacement


   Type Designator: SSU3055A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: IPAK
 

 SSU3055A substitution

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SSU3055A Datasheet (PDF)

 ..1. Size:329K  1
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SSU3055A

 7.1. Size:165K  1
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SSU3055A

 7.2. Size:213K  samsung
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SSU3055A

SSR/U3055LAAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.165 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeD-PAK I-PAK Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V 21 Lower RDS(ON) : 0.124 (Typ.) 12331. Gate 2. Drain 3. Sou

Datasheet: SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , SSU2N60A , IRFP450 , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , SSW3N90A .

Keywords - SSU3055A MOSFET datasheet

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