SSU3055A Specs and Replacement
Type Designator: SSU3055A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: IPAK
SSU3055A substitution
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SSU3055A datasheet
ssu3055la.pdf
SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS(on) = 0.165 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK I-PAK Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V 2 1 Lower RDS(ON) 0.124 (Typ.) 1 2 3 3 1. Gate 2. Drain 3. Sou... See More ⇒
Detailed specifications: SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , SSU2N60A , SPP20N60C3 , SSU3055LA , SSW1N50A , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , SSW3N90A .
Keywords - SSU3055A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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