All MOSFET. HSM24P03 Datasheet

 

HSM24P03 Datasheet and Replacement


   Type Designator: HSM24P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: SOP8
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HSM24P03 Datasheet (PDF)

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HSM24P03

HSM24P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM24P03 is the high cell density trenched P- V -30 V DSch MOSFETs, which provide excellent RDSON and R 3.8 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -24 A DThe HSM24P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME4946-G | AP30H80Q | R6006JND3 | 1N70Z | NP80N06NLG | FDMS3660AS | SIHFR1N60A

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