All MOSFET. HSM24P03 Datasheet

 

HSM24P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM24P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 780 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: SOP8

 HSM24P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM24P03 Datasheet (PDF)

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 hsm24p03.pdf

HSM24P03 HSM24P03

HSM24P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM24P03 is the high cell density trenched P- V -30 V DSch MOSFETs, which provide excellent RDSON and R 3.8 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -24 A DThe HSM24P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

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