HSM24P03 Datasheet and Replacement
Type Designator: HSM24P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: SOP8
HSM24P03 substitution
HSM24P03 Datasheet (PDF)
hsm24p03.pdf

HSM24P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM24P03 is the high cell density trenched P- V -30 V DSch MOSFETs, which provide excellent RDSON and R 3.8 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -24 A DThe HSM24P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi
Datasheet: HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 , IRFZ44N , HSM2627 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 , HSM3202 .
History: STB13N60M2 | FDV301ND87Z | NCE60P70G | CJ2301-HF | IXTF02N450 | NCE60P65K | VBM16R08
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History: STB13N60M2 | FDV301ND87Z | NCE60P70G | CJ2301-HF | IXTF02N450 | NCE60P65K | VBM16R08



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