All MOSFET. HSM2627 Datasheet

 

HSM2627 Datasheet and Replacement


   Type Designator: HSM2627
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76.8 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

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HSM2627 Datasheet (PDF)

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HSM2627

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l

Datasheet: HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 , HSM24P03 , IRF3205 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 , HSM3202 , HSM3206 .

History: NP60N04PDK | IPN60R360P7S | NDT452AP | SFG130N08KF | SJMN250R80ZW | IRFR2905Z | SRT03N011L

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