All MOSFET. HSM2627 Datasheet

 

HSM2627 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM2627
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 76.8 nS
   Cossⓘ - Output Capacitance: 509 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 HSM2627 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM2627 Datasheet (PDF)

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 hsm2627.pdf

HSM2627 HSM2627

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l

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History: IRFB4110Q | MTP2N40

 

 
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