HSM2627 Specs and Replacement

Type Designator: HSM2627

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76.8 nS

Cossⓘ - Output Capacitance: 509 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SOP8

HSM2627 substitution

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HSM2627 datasheet

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HSM2627

HSM2627 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2627 is the high cell density trenched VDS -20 V P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 9 m synchronous buck converter applications. ID -10.7 A The HSM2627 meet the RoHS and Green Product requirement with full function reliability approved. l... See More ⇒

Detailed specifications: HSM0204, HSM0228, HSM1562, HSM1564, HSM1641, HSM20N02, HSM2202, HSM24P03, IRF3205, HSM2903, HSM3002, HSM3006, HSM3056, HSM3107, HSM3115, HSM3202, HSM3206

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