HSM2903 Specs and Replacement

Type Designator: HSM2903

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP8

HSM2903 substitution

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HSM2903 datasheet

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HSM2903

HSM2903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM2903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 14m 10A high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -20V 45m -6.5A converter applications. The HSM2903 meet the RoHS and Green Product requireme... See More ⇒

Detailed specifications: HSM0228, HSM1562, HSM1564, HSM1641, HSM20N02, HSM2202, HSM24P03, HSM2627, IRF740, HSM3002, HSM3006, HSM3056, HSM3107, HSM3115, HSM3202, HSM3206, HSM3214

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