All MOSFET. HSM2903 Datasheet

 

HSM2903 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM2903
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8

 HSM2903 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM2903 Datasheet (PDF)

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 hsm2903.pdf

HSM2903 HSM2903

HSM2903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM2903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 14m 10A high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -20V 45m -6.5A converter applications. The HSM2903 meet the RoHS and Green Product requireme

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