All MOSFET. HSM2903 Datasheet

 

HSM2903 Datasheet and Replacement


   Type Designator: HSM2903
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

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HSM2903 Datasheet (PDF)

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HSM2903

HSM2903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM2903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 14m 10A high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -20V 45m -6.5A converter applications. The HSM2903 meet the RoHS and Green Product requireme

Datasheet: HSM0228 , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 , HSM24P03 , HSM2627 , IRF740 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 , HSM3202 , HSM3206 , HSM3214 .

History: STB45NF06 | RD30HVF1 | SIHD4N80E | IRL520LPBF | NP100N04PUH | SISA24DN | SRT10N047LD56TR-G

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