HSM3115 Datasheet and Replacement
Type Designator: HSM3115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 508 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: SOP8
HSM3115 substitution
HSM3115 Datasheet (PDF)
hsm3115.pdf

HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm3107.pdf

HSM3107 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3107 is the high cell density trenched P-V -30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 42 m DS(ON),typconverter applications. I -5 A DThe HSM3107 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: HSM2202 , HSM24P03 , HSM2627 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , 50N06 , HSM3202 , HSM3206 , HSM3214 , HSM3303 , HSM3305 , HSM3903 , HSM4002 , HSM4004 .
History: NCEP063N10GU | STK830F | PSMN4R3-80BS | IPP70N10S3L-12 | SRM7N65DTR-E1 | IRFS244 | IRF3410
Keywords - HSM3115 MOSFET datasheet
HSM3115 cross reference
HSM3115 equivalent finder
HSM3115 lookup
HSM3115 substitution
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History: NCEP063N10GU | STK830F | PSMN4R3-80BS | IPP70N10S3L-12 | SRM7N65DTR-E1 | IRFS244 | IRF3410



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