HSM3115 Datasheet and Replacement
Type Designator: HSM3115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 508 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: SOP8
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HSM3115 Datasheet (PDF)
hsm3115.pdf

HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm3107.pdf

HSM3107 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3107 is the high cell density trenched P-V -30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 42 m DS(ON),typconverter applications. I -5 A DThe HSM3107 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: MMSF7P03HDR2 | 2SK3510-S | SL3404 | STD4NK50Z | 2N7101 | KP103J | CS9530
Keywords - HSM3115 MOSFET datasheet
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History: MMSF7P03HDR2 | 2SK3510-S | SL3404 | STD4NK50Z | 2N7101 | KP103J | CS9530



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