SSU3055LA Datasheet and Replacement
Type Designator: SSU3055LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.2 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: IPAK
SSU3055LA substitution
SSU3055LA Datasheet (PDF)
ssu3055la.pdf
SSR/U3055LAAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.165 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeD-PAK I-PAK Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V 21 Lower RDS(ON) : 0.124 (Typ.) 12331. Gate 2. Drain 3. Sou
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