HSM3303 Datasheet and Replacement
Type Designator: HSM3303
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.8 nS
Cossⓘ - Output Capacitance: 194 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
HSM3303 substitution
HSM3303 Datasheet (PDF)
hsm3303.pdf

HSM3303 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3303 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -6.5 A The HSM3303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
hsm3305.pdf

HSM3305 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSM3305 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and R 42 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -5 A DThe HSM3305 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func
Datasheet: HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 , HSM3202 , HSM3206 , HSM3214 , IRF1404 , HSM3305 , HSM3903 , HSM4002 , HSM4004 , HSM4006 , HSM4052 , HSM4062 , HSM4094 .
History: WSD3020DN | SWD7N65K2 | SFP085N75C2 | SJMN360R70ZD | SI60N03 | IRF7389 | IRFB4321GPBF
Keywords - HSM3303 MOSFET datasheet
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History: WSD3020DN | SWD7N65K2 | SFP085N75C2 | SJMN360R70ZD | SI60N03 | IRF7389 | IRFB4321GPBF



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