All MOSFET. HSM4606 Datasheet

 

HSM4606 Datasheet and Replacement


   Type Designator: HSM4606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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HSM4606 Datasheet (PDF)

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HSM4606

HSM4606 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM4606 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 22m 7A cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -30V 26m -6A converter applications. The HSM4606 meet the RoHS and Green Product requirement

Datasheet: HSM4103 , HSM4113 , HSM4115 , HSM4204 , HSM4313 , HSM4407 , HSM4410 , HSM4435 , AO3400 , HSM4805 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 , HSO8205 .

History: HAT2169N | CEP18N5 | SQ2315ES | AM3930N | HAT2196C | SQ2319ES | NCE65N290I

Keywords - HSM4606 MOSFET datasheet

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