All MOSFET. HSM6032 Datasheet

 

HSM6032 Datasheet and Replacement


   Type Designator: HSM6032
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41.2 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SOP8
 

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HSM6032 Datasheet (PDF)

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HSM6032

HSM6032 Description Product Summary VDS 60 V The HSM6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configurat

Datasheet: HSM4115 , HSM4204 , HSM4313 , HSM4407 , HSM4410 , HSM4435 , HSM4606 , HSM4805 , IRFP260 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 , HSO8205 , HSO8810 , HSP0016 .

History: IRF7705PBF | CEU07N65A

Keywords - HSM6032 MOSFET datasheet

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