HSM6032 Specs and Replacement

Type Designator: HSM6032

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41.2 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOP8

HSM6032 substitution

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HSM6032 datasheet

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HSM6032

HSM6032 Description Product Summary VDS 60 V The HSM6032 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configurat... See More ⇒

Detailed specifications: HSM4115, HSM4204, HSM4313, HSM4407, HSM4410, HSM4435, HSM4606, HSM4805, 2SK3878, HSM6113, HSM6115, HSM6303, HSM6901, HSM9926, HSO8205, HSO8810, HSP0016

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