HSM6032 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM6032
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 41.2 nS
Cossⓘ - Output Capacitance: 201 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOP8
HSM6032 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM6032 Datasheet (PDF)
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hsm6032.pdf
hsm6032.pdf
HSM6032 Description Product Summary VDS 60 V The HSM6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configurat
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