All MOSFET. HSM6115 Datasheet

 

HSM6115 Datasheet and Replacement


   Type Designator: HSM6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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HSM6115 Datasheet (PDF)

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HSM6115

HSM6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSM6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 25 m gate charge for most of the synchronous buck converter applications. ID -11 A The HSM6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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HSM6115

HSM6113 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM6113 is the high cell density trenched P-VDS -60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 90 m converter applications. ID -4.1 A The HSM6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

Datasheet: HSM4313 , HSM4407 , HSM4410 , HSM4435 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , K4145 , HSM6303 , HSM6901 , HSM9926 , HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A .

History: IRF7105TRPBF | IRFP4127 | SWJ7N65D | IRLR110PBF | SIF12N65C | IPI05CN10N | IRFR110

Keywords - HSM6115 MOSFET datasheet

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