All MOSFET. HSM6303 Datasheet

 

HSM6303 Datasheet and Replacement


   Type Designator: HSM6303
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 97.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOP8
 

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HSM6303 Datasheet (PDF)

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HSM6303

HSM6303 Dual P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM6303 is the high cell density trenched P-VDS -60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),TYP 58 m buck converter applications. ID -4 A The HSM6303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

Datasheet: HSM4407 , HSM4410 , HSM4435 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 , IRF1010E , HSM6901 , HSM9926 , HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 .

History: 2SK3642-ZK

Keywords - HSM6303 MOSFET datasheet

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