HSM6303 Specs and Replacement

Type Designator: HSM6303

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 97.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOP8

HSM6303 substitution

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HSM6303 datasheet

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HSM6303

HSM6303 Dual P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM6303 is the high cell density trenched P- VDS -60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),TYP 58 m buck converter applications. ID -4 A The HSM6303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re... See More ⇒

Detailed specifications: HSM4407, HSM4410, HSM4435, HSM4606, HSM4805, HSM6032, HSM6113, HSM6115, IRF9540N, HSM6901, HSM9926, HSO8205, HSO8810, HSP0016, HSP0018A, HSP0024A, HSP0048

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