All MOSFET. HSM9926 Datasheet

 

HSM9926 Datasheet and Replacement


   Type Designator: HSM9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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HSM9926 Datasheet (PDF)

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HSM9926

HSM9926 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSM9926 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 6 A The HSM9926 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

Datasheet: HSM4435 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , 5N60 , HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , HSP0115 , HSP0139 .

History: PSMN4R8-100PSE | HSP0048

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