All MOSFET. HSO8205 Datasheet

 

HSO8205 Datasheet and Replacement


   Type Designator: HSO8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP8
 

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HSO8205 Datasheet (PDF)

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HSO8205

HSO8205 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8205 is the low RDSON trenched N-CH MOSFETs. This product is suitable for Lithium-ion RDS(ON),max 27 m battery pack applications. The HSO8205 meet the RoHS and Green Product ID 6 A requirement with full function reliability approved. Green Device Available TSSOP8 Pin Configur

Datasheet: HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 , AO3400 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , HSP0115 , HSP0139 , HSP120N08 .

History: 3N60F | SI7448DP

Keywords - HSO8205 MOSFET datasheet

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