HSO8810 Specs and Replacement

Type Designator: HSO8810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP8

HSO8810 substitution

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HSO8810 datasheet

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HSO8810

HSO8810 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),typ 11.5 m product is suitable for Lithium-ion battery pack applications. ID 7.3 A The HSO8810 meet the RoHS and Green Product requirement with full function reliability approved. TSSOP8 Pin Conf... See More ⇒

Detailed specifications: HSM4805, HSM6032, HSM6113, HSM6115, HSM6303, HSM6901, HSM9926, HSO8205, K3569, HSP0016, HSP0018A, HSP0024A, HSP0048, HSP0115, HSP0139, HSP120N08, HSP150N02

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