All MOSFET. HSO8810 Datasheet

 

HSO8810 Datasheet and Replacement


   Type Designator: HSO8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TSSOP8
 

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HSO8810 Datasheet (PDF)

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HSO8810

HSO8810 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),typ 11.5 m product is suitable for Lithium-ion battery pack applications. ID 7.3 A The HSO8810 meet the RoHS and Green Product requirement with full function reliability approved. TSSOP8 Pin Conf

Datasheet: HSM4805 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 , HSO8205 , SPP20N60C3 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , HSP0115 , HSP0139 , HSP120N08 , HSP150N02 .

History: NCEP023NH85AGU | SIRA01DP | IRFB4410ZG | KF7N60P | 2SJ378

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