All MOSFET. HSO8810 Datasheet

 

HSO8810 Datasheet and Replacement


   Type Designator: HSO8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TSSOP8
      - MOSFET Cross-Reference Search

 

HSO8810 Datasheet (PDF)

 ..1. Size:535K  huashuo
 hso8810.pdf pdf_icon

HSO8810

HSO8810 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSO8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),typ 11.5 m product is suitable for Lithium-ion battery pack applications. ID 7.3 A The HSO8810 meet the RoHS and Green Product requirement with full function reliability approved. TSSOP8 Pin Conf

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTY18P10T | GSM2311 | TMU5N40ZG | AUIRF2804STRR | HMS11N70K | SVS11N70MJD2 | RU6Z5R

Keywords - HSO8810 MOSFET datasheet

 HSO8810 cross reference
 HSO8810 equivalent finder
 HSO8810 lookup
 HSO8810 substitution
 HSO8810 replacement

 

 
Back to Top

 


 
.