HSP0115 Specs and Replacement
Type Designator: HSP0115
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 129 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220
HSP0115 substitution
- MOSFET ⓘ Cross-Reference Search
HSP0115 datasheet
hsp0115.pdf
HSP0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSP0115 uses advanced trench MOSFET V -100 V DS technology to provide excellent R and gate DS(ON) R 95 m DS(ON),max charge for use in a wide variety of other applications. I -23 A D The HSP0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability app... See More ⇒
hsp0139.pdf
HSP0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),max 50 m charge for use in a wide variety of other applications. ID -35 A The HSP0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒
Detailed specifications: HSM6901, HSM9926, HSO8205, HSO8810, HSP0016, HSP0018A, HSP0024A, HSP0048, K4145, HSP0139, HSP120N08, HSP150N02, HSP150N15, HSP15810C, HSP18N20, HSP200N02, HSP3018B
Keywords - HSP0115 MOSFET specs
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