All MOSFET. HSP0115 Datasheet

 

HSP0115 Datasheet and Replacement


   Type Designator: HSP0115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO220
 

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HSP0115 Datasheet (PDF)

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HSP0115

HSP0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSP0115 uses advanced trench MOSFET V -100 V DStechnology to provide excellent R and gate DS(ON)R 95 m DS(ON),maxcharge for use in a wide variety of other applications. I -23 A DThe HSP0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability app

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HSP0115

HSP0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),max 50 m charge for use in a wide variety of other applications. ID -35 A The HSP0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Datasheet: HSM6901 , HSM9926 , HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , IRFB3607 , HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , HSP3018B .

History: SST65R600S2 | SI3469DV | SFG100N08GF | IRF7751GTR | WTK9435 | SE10060A

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