All MOSFET. HSP0139 Datasheet

 

HSP0139 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSP0139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 32.2 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220

 HSP0139 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSP0139 Datasheet (PDF)

 ..1. Size:678K  huashuo
 hsp0139.pdf

HSP0139 HSP0139

HSP0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),max 50 m charge for use in a wide variety of other applications. ID -35 A The HSP0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:577K  huashuo
 hsp0115.pdf

HSP0139 HSP0139

HSP0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSP0115 uses advanced trench MOSFET V -100 V DStechnology to provide excellent R and gate DS(ON)R 95 m DS(ON),maxcharge for use in a wide variety of other applications. I -23 A DThe HSP0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability app

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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