HSP0139 Datasheet and Replacement
Type Designator: HSP0139
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32.2 nS
Cossⓘ - Output Capacitance: 223 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220
HSP0139 substitution
HSP0139 Datasheet (PDF)
hsp0139.pdf

HSP0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),max 50 m charge for use in a wide variety of other applications. ID -35 A The HSP0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
hsp0115.pdf

HSP0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSP0115 uses advanced trench MOSFET V -100 V DStechnology to provide excellent R and gate DS(ON)R 95 m DS(ON),maxcharge for use in a wide variety of other applications. I -23 A DThe HSP0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability app
Datasheet: HSM9926 , HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , HSP0115 , AO4407 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , HSP3018B , HSP3105 .
Keywords - HSP0139 MOSFET datasheet
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HSP0139 equivalent finder
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History: GSM4925S | HSP0016



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