All MOSFET. HSP120N08 Datasheet


HSP120N08 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HSP120N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 39 nS
   Drain-Source Capacitance (Cd): 548 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0057 Ohm
   Package: TO220

 HSP120N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSP120N08 Datasheet (PDF)

 ..1. Size:1281K  huashuo


HSP120N08 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP120N08 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON R 4.7 m DS(ON),TYPand gate charge for most of the synchronous buck converter applications. I 120 A DThe HSP120N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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