All MOSFET. HSP120N08 Datasheet

 

HSP120N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSP120N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 548 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220

 HSP120N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSP120N08 Datasheet (PDF)

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 hsp120n08.pdf

HSP120N08 HSP120N08

HSP120N08 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP120N08 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON R 4.7 m DS(ON),TYPand gate charge for most of the synchronous buck converter applications. I 120 A DThe HSP120N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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