All MOSFET. HSP120N08 Datasheet

 

HSP120N08 Datasheet and Replacement


   Type Designator: HSP120N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 548 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220
 

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HSP120N08 Datasheet (PDF)

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HSP120N08

HSP120N08 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP120N08 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON R 4.7 m DS(ON),TYPand gate charge for most of the synchronous buck converter applications. I 120 A DThe HSP120N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

Datasheet: HSO8205 , HSO8810 , HSP0016 , HSP0018A , HSP0024A , HSP0048 , HSP0115 , HSP0139 , 5N60 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , HSP3018B , HSP3105 , HSP4024A .

History: FDB024N04AL7 | FDB12N50TM

Keywords - HSP120N08 MOSFET datasheet

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