All MOSFET. HSP120N08 Datasheet

 

HSP120N08 Datasheet and Replacement


   Type Designator: HSP120N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 548 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220
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HSP120N08 Datasheet (PDF)

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HSP120N08

HSP120N08 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP120N08 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON R 4.7 m DS(ON),TYPand gate charge for most of the synchronous buck converter applications. I 120 A DThe HSP120N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVGP066R1NL5 | 20N50B | WST2026 | HM8205 | 2SK1553-01MR | SVS11N70MJD2 | WFP50N06

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