All MOSFET. HSP18N20 Datasheet

 

 

HSP18N20 Datasheet and Replacement


   Type Designator: HSP18N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO220
 

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HSP18N20 Datasheet (PDF)

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HSP18N20

HSP18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP18N20 is the highest performance trench V 200 V DSN-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge R 170 m DS(ON),maxfor most of the synchronous buck converter I 18 A Dapplications. The HSP18N20 meet the RoHS and Green Product requirement, 100%

Datasheet: HSP0024A , HSP0048 , HSP0115 , HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , IRFB3607 , HSP200N02 , HSP3018B , HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A .

History: IRHLNA797064 | 2SK1724 | OM6027SC | IRHLNJ77034 | RF1K49092 | PHB4ND40E | PHD108NQ03LT

Keywords - HSP18N20 MOSFET datasheet

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