HSP18N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSP18N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 109 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO220
HSP18N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP18N20 Datasheet (PDF)
..1. Size:382K huashuo
hsp18n20.pdf
hsp18n20.pdf
HSP18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP18N20 is the highest performance trench V 200 V DSN-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge R 170 m DS(ON),maxfor most of the synchronous buck converter I 18 A Dapplications. The HSP18N20 meet the RoHS and Green Product requirement, 100%
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
