HSP18N20 Specs and Replacement

Type Designator: HSP18N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 109 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO220

HSP18N20 substitution

- MOSFET ⓘ Cross-Reference Search

 

HSP18N20 datasheet

 ..1. Size:382K  huashuo
 hsp18n20.pdf pdf_icon

HSP18N20

HSP18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP18N20 is the highest performance trench V 200 V DS N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge R 170 m DS(ON),max for most of the synchronous buck converter I 18 A D applications. The HSP18N20 meet the RoHS and Green Product requirement, 100%... See More ⇒

Detailed specifications: HSP0024A, HSP0048, HSP0115, HSP0139, HSP120N08, HSP150N02, HSP150N15, HSP15810C, IRFB3607, HSP200N02, HSP3018B, HSP3105, HSP4024A, HSP4048, HSP6016, HSP6024A, HSP6032A

Keywords - HSP18N20 MOSFET specs

 HSP18N20 cross reference

 HSP18N20 equivalent finder

 HSP18N20 pdf lookup

 HSP18N20 substitution

 HSP18N20 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.