HSP200N02 Specs and Replacement

Type Designator: HSP200N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 343 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: TO220

HSP200N02 substitution

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HSP200N02 datasheet

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HSP200N02

HSP200N02 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP200N02 is the highest performance VDS 200 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 27 m charge for most of the synchronous buck ID 70 A converter applications. The HSP200N02 meet the RoHS and Green Product requirement, 100% EAS... See More ⇒

Detailed specifications: HSP0048, HSP0115, HSP0139, HSP120N08, HSP150N02, HSP150N15, HSP15810C, HSP18N20, AON6380, HSP3018B, HSP3105, HSP4024A, HSP4048, HSP6016, HSP6024A, HSP6032A, HSP6040

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