HSP200N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSP200N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 343 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO220
HSP200N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP200N02 Datasheet (PDF)
..1. Size:694K huashuo
hsp200n02.pdf
hsp200n02.pdf
HSP200N02 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP200N02 is the highest performance VDS 200 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 27 m charge for most of the synchronous buck ID 70 A converter applications. The HSP200N02 meet the RoHS and Green Product requirement, 100% EAS
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