All MOSFET. HSP200N02 Datasheet

 

HSP200N02 Datasheet and Replacement


   Type Designator: HSP200N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 343 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO220
 

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HSP200N02 Datasheet (PDF)

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HSP200N02

HSP200N02 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSP200N02 is the highest performance VDS 200 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 27 m charge for most of the synchronous buck ID 70 A converter applications. The HSP200N02 meet the RoHS and Green Product requirement, 100% EAS

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