HSP3018B MOSFET. Datasheet pdf. Equivalent
Type Designator: HSP3018B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 205 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56.9 nC
Rise Time (tr): 6.3 nS
Drain-Source Capacitance (Cd): 720 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm
Package: TO220
HSP3018B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP3018B Datasheet (PDF)
hsp3018b.pdf
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HSP3018B N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSP3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2 m buck converter applications. ID 205 A The HSP3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
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