All MOSFET. HSP3018B Datasheet

 

HSP3018B Datasheet and Replacement


   Type Designator: HSP3018B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 205 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO220
 

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HSP3018B Datasheet (PDF)

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HSP3018B

HSP3018B N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSP3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2 m buck converter applications. ID 205 A The HSP3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Datasheet: HSP0115 , HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , STP80NF70 , HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 .

History: PMN80XP | NCE70T360 | NCE70T360K | PSMN2R2-30YLC | HAT2108R

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