HSP3018B Specs and Replacement

Type Designator: HSP3018B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 205 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO220

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HSP3018B datasheet

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HSP3018B

HSP3018B N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSP3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2 m buck converter applications. ID 205 A The HSP3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒

Detailed specifications: HSP0115, HSP0139, HSP120N08, HSP150N02, HSP150N15, HSP15810C, HSP18N20, HSP200N02, IRF530, HSP3105, HSP4024A, HSP4048, HSP6016, HSP6024A, HSP6032A, HSP6040, HSP6048

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