HSP3105 PDF and Equivalents Search

 

HSP3105 Specs and Replacement


   Type Designator: HSP3105
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 73.7 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

 HSP3105 substitution

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HSP3105 datasheet

 ..1. Size:538K  huashuo
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HSP3105

HSP3105 General Description Product Summary The HSP3105 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSP3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. TO-220 P... See More ⇒

Detailed specifications: HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , HSP3018B , CS150N03A8 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 .

History: SIHFU9220 | APM4220

Keywords - HSP3105 MOSFET specs

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