All MOSFET. HSP3105 Datasheet

 

HSP3105 Datasheet and Replacement


   Type Designator: HSP3105
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73.7 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO220
 

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HSP3105 Datasheet (PDF)

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HSP3105

HSP3105 General Description Product Summary The HSP3105 is the high cell density trenched P-VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 14 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSP3105 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. TO-220 P

Datasheet: HSP0139 , HSP120N08 , HSP150N02 , HSP150N15 , HSP15810C , HSP18N20 , HSP200N02 , HSP3018B , IRLB4132 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 .

History: KNF6140A | SJMN070R60SW | TK70J04K3Z | IPP80P03P4L-07 | 8N90 | IRLZ44ZLPBF | NTMTS0D7N06C

Keywords - HSP3105 MOSFET datasheet

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