HSP6115 Datasheet and Replacement
Type Designator: HSP6115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 86.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23.6 nS
Cossⓘ - Output Capacitance: 224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO220
HSP6115 substitution
HSP6115 Datasheet (PDF)
hsp6115.pdf

HSP6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6115 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 27 m buck converter applications. I -45 A DThe HSP6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
Datasheet: HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , 2SK3568 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A .
History: SWMI4N60D | APM4927K | 12N70L-TA3-T | 12N70KL-TQ2-R | HY4N60T | RJK0210DPA | NCE60P20K
Keywords - HSP6115 MOSFET datasheet
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History: SWMI4N60D | APM4927K | 12N70L-TA3-T | 12N70KL-TQ2-R | HY4N60T | RJK0210DPA | NCE60P20K



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