All MOSFET. HSP6115 Datasheet

 

HSP6115 Datasheet and Replacement


   Type Designator: HSP6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO220
 

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HSP6115 Datasheet (PDF)

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HSP6115

HSP6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6115 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 27 m buck converter applications. I -45 A DThe HSP6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

Datasheet: HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , 10N65 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A .

Keywords - HSP6115 MOSFET datasheet

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