All MOSFET. HSP6115 Datasheet

 

HSP6115 Datasheet and Replacement


   Type Designator: HSP6115
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO220
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HSP6115 Datasheet (PDF)

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HSP6115

HSP6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6115 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON R and gate charge for most of the synchronous DS(ON),max 27 m buck converter applications. I -45 A DThe HSP6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | TK7P65W | SFFX054Z

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