HSP80P10 Spec and Replacement
Type Designator: HSP80P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 91 nS
Cossⓘ - Output Capacitance: 289 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO220
HSP80P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP80P10 Specs
hsp80p10.pdf
HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 20 m charge for use in a wide variety of other applications. ID -80 A The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.... See More ⇒
hsp8004.pdf
HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DS The HSP8004 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYP gate charge for most of the synchronous buck converter applications. I 175 A D The HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒
Detailed specifications: HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , IRF1407 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C .
Keywords - HSP80P10 MOSFET specs
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