All MOSFET. HSP80P10 Datasheet

 

HSP80P10 Datasheet and Replacement


   Type Designator: HSP80P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 91 nS
   Cossⓘ - Output Capacitance: 289 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO220
 

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HSP80P10 Datasheet (PDF)

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HSP80P10

HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 20 m charge for use in a wide variety of other applications. ID -80 A The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

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HSP80P10

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , P0903BDG , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C .

History: AP01N40J

Keywords - HSP80P10 MOSFET datasheet

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