All MOSFET. HSP80P10 Datasheet

 

HSP80P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSP80P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 210 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 91 nS

Drain-Source Capacitance (Cd): 289 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220

HSP80P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSP80P10 Datasheet (PDF)

 ..1. Size:799K  huashuo
 hsp80p10.pdf

HSP80P10 HSP80P10

HSP80P10 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSP80P10 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 20 m charge for use in a wide variety of other applications. ID -80 A The HSP80P10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:770K  huashuo
 hsp8004.pdf

HSP80P10 HSP80P10

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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