All MOSFET. HSP8N50 Datasheet


HSP8N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSP8N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220

HSP8N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSP8N50 Datasheet (PDF)

0.1. hsp8n50.pdf Size:886K _huashuo


HSP8N50 Description Product Summary HSP8N50 is Fortunatus high voltage MOSFET VDS 500 V family based on advanced planar stripe DMOS technology. This advanced MOSFET family has RDS(ON),typ 850 m optimized on-state resistance, and also provides ID 8 A superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency swi

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