HSP8N50 PDF and Equivalents Search

 

HSP8N50 Specs and Replacement

Type Designator: HSP8N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220

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HSP8N50 datasheet

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 hsp8n50.pdf pdf_icon

HSP8N50

HSP8N50 Description Product Summary HSP8N50 is Fortunatus high voltage MOSFET VDS 500 V family based on advanced planar stripe DMOS technology. This advanced MOSFET family has RDS(ON),typ 850 m optimized on-state resistance, and also provides ID 8 A superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency swi... See More ⇒

Detailed specifications: HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , 2SK3568 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A .

History: IRFPG20 | SMK0990FD

Keywords - HSP8N50 MOSFET specs

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