HSP8N50 Specs and Replacement
Type Designator: HSP8N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220
HSP8N50 substitution
HSP8N50 datasheet
hsp8n50.pdf
HSP8N50 Description Product Summary HSP8N50 is Fortunatus high voltage MOSFET VDS 500 V family based on advanced planar stripe DMOS technology. This advanced MOSFET family has RDS(ON),typ 850 m optimized on-state resistance, and also provides ID 8 A superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency swi... See More ⇒
Detailed specifications: HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , 2SK3568 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A .
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