All MOSFET. HSP8N50 Datasheet

 

HSP8N50 Datasheet and Replacement


   Type Designator: HSP8N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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HSP8N50 Datasheet (PDF)

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HSP8N50

HSP8N50 Description Product Summary HSP8N50 is Fortunatus high voltage MOSFET VDS 500 V family based on advanced planar stripe DMOS technology. This advanced MOSFET family has RDS(ON),typ 850 m optimized on-state resistance, and also provides ID 8 A superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency swi

Datasheet: HSP6016 , HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , 5N65 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A .

History: FQP70N10 | CTN04PN035 | 3SK104V | FTD2011 | 2N7014 | SI1553CDL-T1-GE3 | APT10050LVR

Keywords - HSP8N50 MOSFET datasheet

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