All MOSFET. HSS0008 Datasheet


HSS0008 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSS0008

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.7 nC

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 29 pF

Maximum Drain-Source On-State Resistance (Rds): 0.31 Ohm

Package: SOT23

HSS0008 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSS0008 Datasheet (PDF)

0.1. hss0008.pdf Size:1580K _huashuo


HSS0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS0008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 1.2 A The HSS0008 meet the RoHS and Green Product requirement with full function reliability approv

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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