HSS0008 Specs and Replacement
Type Designator: HSS0008
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT23
HSS0008 substitution
HSS0008 Specs
hss0008.pdf
HSS0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS0008 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 1.2 A The HSS0008 meet the RoHS and Green Product requirement with full function reliability approv... See More ⇒
Detailed specifications: HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , 10N65 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B .
History: HSS2301C
Keywords - HSS0008 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
