All MOSFET. HSS0008 Datasheet

 

HSS0008 Datasheet and Replacement


   Type Designator: HSS0008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.7 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT23
 

 HSS0008 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSS0008 Datasheet (PDF)

 ..1. Size:1580K  huashuo
 hss0008.pdf pdf_icon

HSS0008

HSS0008 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS0008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 310 m and efficiency for most of the small power switching and load switch applications. ID 1.2 A The HSS0008 meet the RoHS and Green Product requirement with full function reliability approv

Datasheet: HSP6024A , HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , STP80NF70 , HSS0127 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B .

History: VBZM40N03 | 50N06AF

Keywords - HSS0008 MOSFET datasheet

 HSS0008 cross reference
 HSS0008 equivalent finder
 HSS0008 lookup
 HSS0008 substitution
 HSS0008 replacement

 

 
Back to Top

 


 
.